PART |
Description |
Maker |
K4D623238B-GQC |
512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM wi Extended Data Out Data Sheet
|
Samsung Electronic
|
422B 422E |
Max voltage:24V; 200mA; data processing data line protector. For data processing equipment, long line transmission systems, control processing computers, building managenent systems
|
Protek Devices
|
M13S128324A-2M |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
W631GG6KB-15 W631GG6KB12A W631GG6KB12I W631GG6KB12 |
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
K4E661612EK4E641612E |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet
|
Samsung Electronic
|
F-137G |
High Frequency Data Line Filter 3 Coils 6 Data Lines
|
Rhombus Industries Inc.
|
DSK4D263238D K4D263238D K4D263238D-QC40 K4D263238D |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HI-8788PQTF HI-8787 HI-8787_06 HI-8787PQI HI-8787P |
ARINC INTERFACE DEVICES 16 bit parallel data converted to 429 & 561 serial data out
|
HOLTIC[Holt Integrated Circuits]
|
SH713609 SH7137 |
SCI Clock Synchronous Simultaneous Transmit and Receive of Serial Data and DTC Data Transfer
|
Renesas Electronics Corporation
|
NT5DS4M32EG-6 NT5DS4M32EG NT5DS4M32EG-5 NT5DS4M32E |
1M 】 32 Bits 】 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL
|
NANOAMP[NanoAmp Solutions, Inc.]
|
S5T0167X01 |
DTMF DIALER FOR BINARY DATA-IN Data Sheet
|
Samsung Electronic
|